Summer school on Defects in Semiconductors -
Origin, characterization, impact on devices and yield.
10- 14 september 2018, Ghent.

The goal of the doctoral school is to introduce PhD students and researchers and engineers from industry to defects in semiconductors and their important impact on the characteristics of electronic devices and on the yield of wafer and device processing. All aspects of defects in semiconductors will be dealt with, ranging from fundamental aspects like their atomic structure, origin, electronic and optical properties, over the best suited characterization and simulation techniques, to their impact on devices and process yield including defect engineering. While most of the knowledge has been gained in the past on silicon materials and processing, there is a renewed strong interest in defect control and engineering, in order to add new functionalities on a silicon platform. This ranges from sustainable applications like high performance semiconductor-based solar cells, solid-state lighting (GaN-onsilicon Light Emitting Diodes) and power devices to future Complementary Metal-Oxide-Semiconductor (CMOS) devices and beyond (Tunnel-Field-Effect Transistors; nanowire transistors).