Day 4: Thursday 13 September: Interface and Bulk Defects – Defect Modeling

09.00-10.00: Interface and oxide defects – electrical characterization (Ben Kaczer)
10.00-10.30: coffee break
10.30-11.30: Interface/ oxide defects: spectroscopic characterization (EPR) (Andre Stesmans)
11.30-12.30: Characterisation of 2D materials with transmission electron microscopy
       (Nicolas Gauquelin)
12.30-14.00: lunch
14.00-15.00: An introduction to first-principles simulations (Geoffrey Pourtois)
15.00-16.00: Modeling of defects in different phases of matters: from three-dimensional
       crystalline/amorphous materials to two-dimensional ones (Geoffrey Pourtois)
16.00-17.00: An introduction to device modelling with SCAPS (Johan Lauwaert)